ABB 5SHY35L4520 Asymmetric IGCT 4500V 4000A Power Semiconductor for High-Power Applications

ABB 5SHY35L4520 Overview

ABB 5SHY35L4520 belongs to ABB’s family of Integrated Gate-Commutated Thyristors
and is identified as an Asymmetric IGCT. The device is specified with a
repetitive peak off-state voltage of 4500 V and a maximum controllable
turn-off current of 4000 A. Its electrical characteristics make it suitable
for power conversion architectures where high voltage blocking capability,
high current switching, and controlled turn-off performance are essential.

Unlike conventional semiconductor devices that may require separate gate
control arrangements, the 5SHY35L4520 incorporates an integrated gate unit.
This arrangement is intended to support the direct control of the IGCT during
switching operation while providing status feedback and a practical control
interface for the associated power electronic system.

Key Electrical Characteristics

The electrical ratings of the ABB 5SHY35L4520 define its operating capability
in high-power converter circuits. The repetitive peak off-state voltage
V_DRM is rated at 4500 V, while the specified DC voltage value is
2800 V. The maximum controllable turn-off current I_TGQM is
4000 A. These ratings allow the device to operate as a high-power switching
element in converter topologies requiring substantial voltage and current
capability.

Under the specified double-sided cooling condition with a case temperature
of 85 °C, the maximum average on-state current I_T(AV)M is 1700 A.
The maximum RMS on-state current is specified as 2670 A. These values are
important when determining the current capability and thermal design of a
complete converter assembly.

High Current Switching Performance

One of the defining characteristics of the 5SHY35L4520 is its high current
turn-off capability. The maximum controllable turn-off current is 4000 A
under the conditions specified in the ABB semiconductor documentation.
The device is also designed for a high snubberless turn-off rating, reducing
the dependence on conventional external snubber arrangements in appropriately
designed circuits.

The datasheet specifies a critical rate of rise of on-state current
di_T/dt of 200 A/µs. Proper circuit inductance, gate control,
commutation design, and thermal management remain important when applying
the device at high current levels. The electrical limits in the technical
documentation should be used as the basis for detailed converter design.

On-State Characteristics

The ABB 5SHY35L4520 has a typical on-state voltage of 2.35 V and a maximum
specified value of 2.70 V at 4000 A and a junction temperature of 125 °C.
The threshold voltage V_T0 is specified at 1.40 V, while the slope
resistance r_T is approximately 0.325 mΩ under the relevant
semiconductor test conditions.

These parameters are particularly relevant when calculating conduction
losses in a converter. At the system level, the semiconductor conduction
characteristics must be considered together with cooling conditions,
switching frequency, current waveform, mounting arrangement, and the
characteristics of the complete power circuit.

Surge Current Capability

The 5SHY35L4520 also provides substantial non-repetitive surge current
capability. According to the semiconductor datasheet, the maximum peak
non-repetitive surge on-state current is 50 kA for a 3 ms half-sine
condition at a junction temperature of 125 °C. For a 10 ms condition,
the specified peak surge current is 32 kA, while the 30 ms value is
20.5 kA.

Corresponding limiting load integral values are specified for these surge
conditions. These figures are design reference values rather than continuous
operating ratings. Protection coordination and converter design should
therefore ensure that abnormal current conditions remain within the
semiconductor’s specified limits.

Integrated Gate Control

The integrated gate control unit is an important part of the ABB 5SHY35L4520
configuration. The gate system provides the control mechanism required for
IGCT switching and supports the device’s high-speed turn-on and turn-off
operation. The datasheet specifies a turn-on delay time of approximately
3.5 µs and a turn-off delay time of approximately 7 µs under the stated
conditions.

For power converter engineers, the integrated gate arrangement simplifies
the relationship between the semiconductor and its control circuitry.
Nevertheless, the complete gate drive interface, supply arrangement,
feedback signals, mechanical mounting, and electrical connections must
follow the applicable ABB documentation and the design requirements of
the host converter.

Mechanical and Thermal Design

Mechanical mounting is an important consideration for the 5SHY35L4520.
The device has an approximate length of 439 mm, width of 173 mm, and height
of 41 mm. The specified mounting force is 40 kN. These dimensions and
mechanical requirements should be considered when designing the clamping
structure, cooling arrangement, electrical clearances, and service access
around the semiconductor assembly.

The IGCT is intended for a double-sided cooling arrangement in the
specified current-rating conditions. Effective thermal transfer is
essential because the device operates at very high current levels.
The thermal interface, clamping force, cooling surfaces, and converter
operating conditions all influence the actual junction temperature and
permissible operating point.

Medium-Frequency Power Conversion

ABB documentation identifies the 5SHY35L4520 as optimized for medium-frequency
applications. This characteristic makes the device relevant to converter
systems where switching performance must be balanced against semiconductor
conduction and switching losses. Its combination of high voltage capability,
high current capability, and controllable turn-off makes the IGCT architecture
suitable for demanding power conversion systems.

Typical engineering environments for IGCT technology include high-power
industrial converters, medium-voltage drive systems, power conversion
equipment, and other specialized electrical systems requiring high-power
semiconductor switching. The exact suitability of the 5SHY35L4520 depends
on the converter topology, operating voltage, current profile, switching
frequency, cooling system, and control strategy.

ABB 5SHY35L4520 Technical Specifications

Application Considerations

When integrating the ABB 5SHY35L4520 into a power electronic system,
engineers should evaluate electrical, thermal, mechanical, and control
requirements together. The voltage blocking capability should be matched
to the converter’s DC-link and transient conditions, while current ratings
must be evaluated against the actual RMS, average, and peak current
waveforms.

Mechanical clamping and thermal interfaces are equally important because
the device relies on the specified mounting arrangement and cooling
conditions to achieve its rated performance. Gate control parameters,
commutation inductance, protection circuits, and system-level insulation
requirements should also be reviewed before implementation.

Conclusion

ABB 5SHY35L4520 is a high-power Asymmetric Integrated Gate-Commutated
Thyristor designed for demanding power conversion applications. Its
4500 V repetitive peak off-state voltage, 4000 A maximum controllable
turn-off current, 1700 A average on-state current, integrated gate control
unit, and high surge current capability provide a combination of electrical
performance suited to advanced industrial converter architectures.

For engineers and system integrators, the 5SHY35L4520 provides a practical
semiconductor solution where high-power switching, medium-frequency
operation, controlled turn-off, and substantial current capability are
required. Correct application should always be based on the relevant ABB
technical documentation and the complete electrical, thermal, and mechanical
design of the host system.