ABB 5SHY35L4510 Asymmetric Integrated Gate-Commutated Thyristor 4500V 4000A High-Power Semiconductor

ABB 5SHY35L4510 Product Overview

The 5SHY35L4510 belongs to the ABB family of Integrated Gate-Commutated
Thyristors. It is specifically identified as an Asymmetric IGCT, meaning
that the semiconductor structure is intended primarily for forward blocking
and high-power controlled switching rather than symmetrical reverse-voltage
operation. This configuration allows the device to focus its electrical
characteristics on the requirements of high-power converter circuits.

ABB specifies the 5SHY35L4510 for medium-frequency operation below 1 kHz.
This operating range provides an important balance between switching
capability and semiconductor losses. The device is therefore suited to
power conversion systems in which the switching frequency is higher than
conventional line-frequency thyristor applications but remains within the
practical operating range of high-power IGCT technology.

High Voltage Blocking Capability

A principal characteristic of the ABB 5SHY35L4510 is its 4500 V repetitive
peak off-state voltage rating. This parameter defines the maximum repetitive
forward blocking voltage under the conditions specified for the device.
The permanent DC-link voltage is specified at 2800 V for the stated
reliability conditions, providing an important reference when selecting
the IGCT for a converter DC-link.

The 5SHY35L4510 also has a reverse voltage rating of 10 V with the IGCT
in the on-state. Because the device is intended for asymmetric converter
structures, system designers should evaluate reverse voltage requirements
together with any antiparallel diode or other commutation components used
in the complete power circuit.

High Current Switching Performance

The maximum controllable turn-off current of the ABB 5SHY35L4510 is
4000 A under the conditions specified in the semiconductor documentation.
This high turn-off capability is one of the key characteristics of the
IGCT architecture. It allows the semiconductor to interrupt substantial
current through gate control while maintaining the voltage and current
characteristics required by high-power converter systems.

The device has a maximum average on-state current of 1700 A when operated
under the specified half-sine-wave and double-sided cooling conditions at
a case temperature of 85 °C. Its maximum RMS on-state current is specified
as 2670 A. These values provide important reference points for thermal and
electrical calculations when designing a complete converter assembly.

On-State Electrical Characteristics

At a junction temperature of 125 °C and an on-state current of 4000 A,
the typical on-state voltage of the 5SHY35L4510 is approximately 2.35 V,
with a maximum specified value of 2.7 V. The threshold voltage is specified
at 1.4 V, while the slope resistance is approximately 0.325 mΩ under the
applicable conditions.

These parameters are useful when calculating conduction losses and thermal
behavior. In an actual power converter, semiconductor losses depend on
current waveform, junction temperature, operating point, switching
frequency, cooling conditions, and the electrical topology surrounding
the IGCT. Therefore, the individual device ratings should be evaluated
together with the complete system design.

Surge Current and di/dt Capability

The ABB 5SHY35L4510 is designed to withstand significant non-repetitive
surge currents. The maximum peak non-repetitive surge on-state current
is specified as 32 kA for a 10 ms sine-wave condition, with a corresponding
limiting load integral of 5.12 × 10⁶ A²s. For a
30 ms condition, the peak surge current is specified at 21 kA with a
limiting load integral of 6.62 × 10⁶ A²s.

The critical rate of rise of on-state current is specified at 200 A/µs
under the applicable maximum-rated conditions. The converter’s commutation
circuit, stray inductance, protection network, and gate-control strategy
should therefore be designed to keep current transients within the
specified operating limits.

Integrated Gate Unit and Control Interface

An important feature of the 5SHY35L4510 is its integrated gate control
arrangement. The gate unit provides the control interface required for
IGCT switching and includes status feedback functions. ABB describes the
control concept as simple, with the gate system supporting AC or DC supply
voltage according to the specified configuration.

The specified turn-on delay time is approximately 3.5 µs, while the
turn-off delay time is approximately 7 µs. Status feedback is also provided
for the gate control system. These characteristics allow the IGCT to be
coordinated with the converter control architecture and protection system
while maintaining the switching behavior expected from a high-power
controlled semiconductor.

Medium-Frequency Converter Applications

ABB optimized the 5SHY35L4510 for medium-frequency applications below
1 kHz and for a wide temperature range. Its combination of high blocking
voltage and high controllable current makes the device applicable to
high-power converter architectures where conventional semiconductor
technologies may require a larger number of devices or more complex
switching arrangements.

IGCT technology can be used in high-power industrial drives, medium-voltage
conversion equipment, voltage-source converter systems, and specialized
power electronic installations. The actual application of the 5SHY35L4510
depends on the converter topology, DC-link voltage, current waveform,
switching frequency, cooling arrangement, gate control configuration,
and system-level protection requirements.

ABB 5SHY35L4510 Technical Specifications

Mechanical and Thermal Considerations

The mechanical construction of the ABB 5SHY35L4510 is an important part
of its application. The device has an approximate length of 439 mm, width
of 173 mm, and height of 40 mm, with a specified mounting force ranging
from 36 kN to 44 kN. The pole-piece diameter is approximately 85 mm and
the housing thickness is approximately 25.3 to 25.8 mm.

The device is intended to operate with double-sided cooling under the
conditions used for its current ratings. Correct mechanical pressure and
thermal contact are therefore essential. Converter designers should
consider the cooling surfaces, clamping structure, thermal interface,
electrical clearances, and surrounding mechanical components as part of
the complete IGCT installation.

Design and Integration Considerations

When integrating the 5SHY35L4510 into a converter, the DC-link voltage
should be evaluated against both the permanent voltage specification and
transient overvoltage conditions. Current calculations should consider
average current, RMS current, peak current, surge current, and the actual
waveform produced by the converter topology.

Gate control and commutation design are equally important. The maximum
controllable turn-off current, current rate of rise, switching energy,
stray inductance, and gate-control timing must be considered together.
Protection circuits should also be coordinated with the semiconductor
ratings to prevent electrical transients from exceeding the specified
limits.

Conclusion

The ABB 5SHY35L4510 is a high-power Asymmetric Integrated Gate-Commutated
Thyristor developed for demanding power conversion and controlled switching
applications. Its 4500 V repetitive peak off-state voltage, 2800 V
permanent DC-link voltage, 4000 A controllable turn-off current, 1700 A
average on-state current, and 2670 A RMS on-state current provide a strong
combination of voltage and current capability for high-power converter
architectures.

Its integrated gate control concept, status feedback, high snubberless
turn-off rating, and optimization for medium-frequency operation below
1 kHz further define the role of the 5SHY35L4510 within ABB’s IGCT product
family. For engineers working with high-power semiconductor converters,
the device offers a combination of controlled switching, high current
capability, and high voltage blocking characteristics that can be evaluated
for demanding industrial power electronic systems.